Дискретные полупроводники для промышленности

Подкатегории

FF450R17ME4B11BOSA1
IGBT Module, Dual, 600 A, 1.95 V, 2.5 kW, 150 °C, Module
INFINEON
  • Dual
  • 600 A
  • 1.95 V
  • 2.5 kW
  • 150 °C
  • Module
DDB6U104N16RRBPSA1
Diode Module, 1.6 kV, 25 A, Bridge, Module
INFINEON
  • 1.6 kV
  • 25 A
  • Bridge
  • Module
2N6845
Power MOSFET, P Channel, 100 V, 4 A, 0.6 ohm, TO-39, Through Hole
TT ELECTRONICS / SEMELAB
  • P Channel
  • 100 V
  • 4 A
  • 0.6 ohm
  • TO-39
  • Through Hole
STE40NC60
MOSFET Transistor, N Channel, 40 A, 600 V, 0.135 ohm, 10 V
STMICROELECTRONICS
  • N Channel
  • 40 A
  • 600 V
  • 0.135 ohm
  • 10 V
NXH400N100H4Q2F2SG
IGBT Module, Four Pack, 409 A, 1.77 V, 959 W, 175 °C, Module
ONSEMI
  • Four Pack
  • 409 A
  • 1.77 V
  • 959 W
  • 175 °C
  • Module
TW015Z120C,S1F(S
Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.015 ohm, TO-247
TOSHIBA
  • Single
  • N Channel
  • 100 A
  • 1.2 kV
  • 0.015 ohm
  • TO-247
DDB6U144N16RBPSA1
Diode Module, 1.6 kV, 100 A, 1.65 V, Bridge, Module
INFINEON
  • 1.6 kV
  • 100 A
  • 1.65 V
  • Bridge
  • Module
SCT3022KLHRC11
Silicon Carbide MOSFET, Single, N Channel, 95 A, 1.2 kV, 0.022 ohm, TO-247N
ROHM
  • Single
  • N Channel
  • 95 A
  • 1.2 kV
  • 0.022 ohm
  • TO-247N
MRF9060LR1
RF FET Transistor, 65 V, 200 µA, 159 W, 945 MHz, NI-360
NXP
  • 65 V
  • 200 µA
  • 159 W
  • 945 MHz
  • NI-360
PK160FG160
THYRISTOR DIODE MODULE, 1.6KV, 251A
SANREX
  • 1.6KV
  • 251A
FZ600R12KE3HOSA1
IGBT Module, Single Switch, 900 A, 1.7 V, 2.8 kW, 125 °C, Module
INFINEON
  • Single Switch
  • 900 A
  • 1.7 V
  • 2.8 kW
  • 125 °C
  • Module
SKB6012
Bridge Rectifier, Single Phase, 1.2 kV, 67 A, Module, 4 Pins, 1.6 V
SEMIKRON
  • Single Phase
  • 1.2 kV
  • 67 A
  • Module
  • 4 Pins
  • 1.6 V
FF900R17ME7B11BPSA1
IGBT Module, Dual [Half Bridge], 900 A, 1.7 V, 20 mW, 175 °C, Module
INFINEON
  • Dual [Half Bridge]
  • 900 A
  • 1.7 V
  • 20 mW
  • 175 °C
  • Module
MSC2X50SDA170J
Silicon Carbide Schottky Diode, Schottky, 1.7 kV, 50 A, SOT-227
MICROCHIP
  • Schottky
  • 1.7 kV
  • 50 A
  • SOT-227
FP100R12KT4BOSA1
IGBT Module, PIM Three Phase Input Rectifier, 100 A, 1.75 V, 515 W, 150 °C, Module
INFINEON
  • PIM Three Phase Input Rectifier
  • 100 A
  • 1.75 V
  • 515 W
  • 150 °C
  • Module
F1892HD1000
POWER MODULE F18, HD, 90A, 380VAC
SENSATA/CRYDOM
  • HD
  • 90A
  • 380VAC
FP100R12KT4PBPSA1
IGBT Module, 100 A, 1.75 V, 515 W, 150 °C, Module
INFINEON
  • 100 A
  • 1.75 V
  • 515 W
  • 150 °C
  • Module
FF5MR20KM1HHPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 195 A, 2 kV, 0.008 ohm, Module
INFINEON
  • Half Bridge
  • Dual N Channel
  • 195 A
  • 2 kV
  • 0.008 ohm
  • Module
FF400R07A01E3S6XKSA2
IGBT Module, Dual, 400 A, 1.65 V, 1.5 kW, 175 °C, Module
INFINEON
  • Dual
  • 400 A
  • 1.65 V
  • 1.5 kW
  • 175 °C
  • Module
SKT340/12E
Thyristor Module, 340 A, 1200 V
SEMIKRON
  • 340 A
  • 1200 V
F1892RD1600
Diode Module, 600 V, 90 A, 1.4 V, RD, Module, 3 Pins
SENSATA/CRYDOM
  • 600 V
  • 90 A
  • 1.4 V
  • RD
  • Module
  • 3 Pins
FS75R12KE3GBOSA1
IGBT Module, Six Pack [Full Bridge], 100 A, 1.7 V, 355 W, 125 °C, Module
INFINEON
  • Six Pack [Full Bridge]
  • 100 A
  • 1.7 V
  • 355 W
  • 125 °C
  • Module
NXH50C120L2C2ES1G
IGBT Module, Three Phase CIB [Converter + Inverter + Brake], 50 A, 2.4 V, 20 mW, 150 °C, DIP
ONSEMI
  • Three Phase CIB [Converter + Inverter + Brake]
  • 50 A
  • 2.4 V
  • 20 mW
  • 150 °C
  • DIP
MRF6V10010NR4
RF FET Transistor, 100 V, 960 MHz, 1.4 GHz, PLD-1.5
NXP
  • 100 V
  • 960 MHz
  • 1.4 GHz
  • PLD-1.5
TD820N16KOFHPSA1
SCR THYRISTOR, 1.6KV, 820A
INFINEON
  • 1.6KV
  • 820A

Дискретные полупроводники: MOSFET, IGBT транзисторы, диоды Шоттки, стабилитроны, тиристоры, симисторы, TVS-диоды. Поставка электронных компонентов для промышленности. Оптовые цены. ☎ 8 800 505 18 24