Диоды Шоттки

MSC2X50SDA170J
Silicon Carbide Schottky Diode, Schottky, 1.7 kV, 50 A, SOT-227

MICROCHIP

  • Schottky
  • 1.7 kV
  • 50 A
  • SOT-227
BAS85.115
Small Signal Schottky Diode, Single, 30 V, 200 mA, 800 mV, 5 A, 125 °C

NEXPERIA

  • Single
  • 30 V
  • 200 mA
  • 800 mV
  • 5 A
  • 125 °C
HSMS-2822-TR1G
RF Schottky Diode, Barrier, Dual Series, 15 V, 1 A, 340 mV, 1 pF, SOT-23

BROADCOM

  • Barrier
  • Dual Series
  • 15 V
  • 1 A
  • 340 mV
  • 1 pF
  • SOT-23
VS-SC50BA65
Silicon Carbide Schottky Diode, Bridge, 650 V, 50 A, 110 nC, SOT-227

VISHAY

  • Bridge
  • 650 V
  • 50 A
  • 110 nC
  • SOT-227
MSC2X51SDA170J
Silicon Carbide Schottky Diode, Schottky, 1.7 kV, 50 A, SOT-227

MICROCHIP

  • Schottky
  • 1.7 kV
  • 50 A
  • SOT-227
MSC030SDA330B
Silicon Carbide Schottky Diode, Single, 3.3 kV, 62 A, 274 nC, TO-247

MICROCHIP

  • Single
  • 3.3 kV
  • 62 A
  • 274 nC
  • TO-247
HSMS-2814-TR1G
RF Schottky Diode, Barrier, Common Cathode, 20 V, 1 mA, 1 V, 1.2 pF, SOT-23

BROADCOM

  • Barrier
  • Common Cathode
  • 20 V
  • 1 mA
  • 1 V
  • 1.2 pF
  • SOT-23
VS-SC50BA65
Silicon Carbide Schottky Diode, Bridge, 650 V, 50 A, 110 nC, SOT-227

VISHAY

  • Bridge
  • 650 V
  • 50 A
  • 110 nC
  • SOT-227
VS-SC90BA65
Silicon Carbide Schottky Diode, Bridge, 650 V, 90 A, 164 nC, SOT-227

VISHAY

  • Bridge
  • 650 V
  • 90 A
  • 164 nC
  • SOT-227
HSMS-2800-TR1G
RF Schottky Diode, Barrier, Single, 70 V, 1 A, 410 mV, 2 pF, SOT-23

BROADCOM

  • Barrier
  • Single
  • 70 V
  • 1 A
  • 410 mV
  • 2 pF
  • SOT-23
GB25MPS17-247
Silicon Carbide Schottky Diode, MPS, Single, 1.7 kV, 110 A, 103 nC, TO-247

GENESIC SEMICONDUCTOR

  • MPS
  • Single
  • 1.7 kV
  • 110 A
  • 103 nC
  • TO-247
LSIC2SD120N80PA
Silicon Carbide Schottky Diode, Dual, 1.2 kV, 150 A, 240 nC, SOT-227B

LITTELFUSE

  • Dual
  • 1.2 kV
  • 150 A
  • 240 nC
  • SOT-227B
BAT165E6327HTSA1
Small Signal Schottky Diode, Single, 40 V, 500 mA, 700 mV, 2.5 A, 150 °C

INFINEON

  • Single
  • 40 V
  • 500 mA
  • 700 mV
  • 2.5 A
  • 150 °C
HSMS-2815-TR1G
RF Schottky Diode, Barrier, Dual Independent, 20 V, 1 A, 410 mV, 1.2 pF, SOT-143

BROADCOM

  • Barrier
  • Dual Independent
  • 20 V
  • 1 A
  • 410 mV
  • 1.2 pF
  • SOT-143
BAS7004E6327
Small Signal Schottky Diode, Single, 70 V, 70 mA, 700 mV, 100 mA, 125 °C

INFINEON

  • Single
  • 70 V
  • 70 mA
  • 700 mV
  • 100 mA
  • 125 °C
HSMS-8202-TR1G
RF Schottky Diode, Dual Series, 4 V, 5 mA, 350 mV, 0.26 pF, SOT-23

BROADCOM

  • Dual Series
  • 4 V
  • 5 mA
  • 350 mV
  • 0.26 pF
  • SOT-23
LSIC2SD120N120PA
Silicon Carbide Schottky Diode, Dual, 1.2 kV, 240 A, 368 nC, SOT-227B

LITTELFUSE

  • Dual
  • 1.2 kV
  • 240 A
  • 368 nC
  • SOT-227B
GD2X75MPS17N
Silicon Carbide Schottky Diode, MPS Gen IV, Dual Isolated, 1.7 kV, 230 A, 524 nC, SOT-227

GENESIC SEMICONDUCTOR

  • MPS Gen IV
  • Dual Isolated
  • 1.7 kV
  • 230 A
  • 524 nC
  • SOT-227
VS-SC90BA65
Silicon Carbide Schottky Diode, Bridge, 650 V, 90 A, 164 nC, SOT-227

VISHAY

  • Bridge
  • 650 V
  • 90 A
  • 164 nC
  • SOT-227
HSMS-2850-TR1G
RF Schottky Diode, Zero Bias, Single, 2 V, 1 mA, 250 mV, 0.3 pF, SOT-23

BROADCOM

  • Zero Bias
  • Single
  • 2 V
  • 1 mA
  • 250 mV
  • 0.3 pF
  • SOT-23
GB2X100MPS12-227
Silicon Carbide Schottky Diode, MPS, Dual Isolated, 1.2 kV, 370 A, 796 nC, SOT-227

GENESIC SEMICONDUCTOR

  • MPS
  • Dual Isolated
  • 1.2 kV
  • 370 A
  • 796 nC
  • SOT-227
MSC090SDA330B2
Silicon Carbide Schottky Diode, Single, 3.3 kV, 184 A, 927 nC, T-MAX

MICROCHIP

  • Single
  • 3.3 kV
  • 184 A
  • 927 nC
  • T-MAX
MSC2X30SDA170J
Silicon Carbide Schottky Diode, Schottky, 1.7 kV, 30 A, SOT-227

MICROCHIP

  • Schottky
  • 1.7 kV
  • 30 A
  • SOT-227
MSC2X31SDA170J
Silicon Carbide Schottky Diode, Schottky, 1.7 kV, 30 A, SOT-227

MICROCHIP

  • Schottky
  • 1.7 kV
  • 30 A
  • SOT-227
BAS4004E6327
Small Signal Schottky Diode, Single, 40 V, 120 mA, 380 mV, 750 mA, 125 °C

INFINEON

  • Single
  • 40 V
  • 120 mA
  • 380 mV
  • 750 mA
  • 125 °C