Биполярные транзисторы с изолированным затвором (IGBT)

Подкатегории

MID75-12A3
IGBT Module, Single, 90 A, 2.2 V, 190 W, 125 °C, Y4-M5

IXYS SEMICONDUCTOR

  • Single
  • 90 A
  • 2.2 V
  • 190 W
  • 125 °C
  • Y4-M5
MII100-12A3
IGBT Module, Dual, 135 A, 2.2 V, 560 W, 125 °C, Module

IXYS SEMICONDUCTOR

  • Dual
  • 135 A
  • 2.2 V
  • 560 W
  • 125 °C
  • Module
MID200-12A4
IGBT Module, Single, 270 A, 2.2 V, 1.13 mW, 150 °C, Module

IXYS SEMICONDUCTOR

  • Single
  • 270 A
  • 2.2 V
  • 1.13 mW
  • 150 °C
  • Module
MDI200-12A4
IGBT Module, Single, 270 A, 2.2 V, 1.13 kW, 150 °C, Module

IXYS SEMICONDUCTOR

  • Single
  • 270 A
  • 2.2 V
  • 1.13 kW
  • 150 °C
  • Module
MII75-12A3
IGBT Module, Dual [Half Bridge], 90 A, 2.2 V, 370 W, 125 °C, Module

IXYS SEMICONDUCTOR

  • Dual [Half Bridge]
  • 90 A
  • 2.2 V
  • 370 W
  • 125 °C
  • Module
MDI145-12A3
IGBT Module, Single, 160 A, 2.2 V, 700 W, 125 °C, Y4-M5

IXYS SEMICONDUCTOR

  • Single
  • 160 A
  • 2.2 V
  • 700 W
  • 125 °C
  • Y4-M5
IXGH36N60B3C1
IGBT, 75 A, 1.8 V, 250 W, 600 V, TO-247, 3 Pins

IXYS SEMICONDUCTOR

  • 75 A
  • 1.8 V
  • 250 W
  • 600 V
  • TO-247
  • 3 Pins