Биполярные транзисторы с изолированным затвором (IGBT)

Подкатегории

VS-GT200TS065S
IGBT Module, Half Bridge, 476 A, 1 kW, 175 °C, INT-A-PAK

VISHAY

  • Half Bridge
  • 476 A
  • 1 kW
  • 175 °C
  • INT-A-PAK
VS-50MT060WHTAPBF
IGBT, 114 A, 2.3 V, 658 W, 600 V, MTP, 12 Pins

VISHAY

  • 114 A
  • 2.3 V
  • 658 W
  • 600 V
  • MTP
  • 12 Pins
VS-GT100TS065S
IGBT Module, Half Bridge, 247 A, 517 W, 175 °C, INT-A-PAK

VISHAY

  • Half Bridge
  • 247 A
  • 517 W
  • 175 °C
  • INT-A-PAK
VS-GT150TS065S
IGBT Module, Half Bridge, 372 A, 789 W, 175 °C, INT-A-PAK

VISHAY

  • Half Bridge
  • 372 A
  • 789 W
  • 175 °C
  • INT-A-PAK
VS-GT90DA120U
IGBT Module, Single Switch, 169 A, 781 W, 150 °C, SOT-227

VISHAY

  • Single Switch
  • 169 A
  • 781 W
  • 150 °C
  • SOT-227
VS-GT100TS065N
IGBT Module, Half Bridge, 96 A, 259 W, 175 °C, INT-A-PAK

VISHAY

  • Half Bridge
  • 96 A
  • 259 W
  • 175 °C
  • INT-A-PAK
VS-GT200TS065N
IGBT Module, Half Bridge, 193 A, 517 W, 175 °C, INT-A-PAK

VISHAY

  • Half Bridge
  • 193 A
  • 517 W
  • 175 °C
  • INT-A-PAK