STMICROELECTRONICS, A2C35S12M3

IGBT Module, Three Phase CIB [Converter + Inverter + Brake], 35 A, 1.95 V, 250 W, 150 °C, Module

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Manufacturer
STMICROELECTRONICS
Manufacturer Part NoA2C35S12M3
Order Code2851960

9 891 руб.

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Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

Техническая спецификация

IGBT ConfigurationThree Phase CIB [Converter + Inverter + Brake]
Transistor PolarityN Channel
DC Collector Current35A
Continuous Collector Current35A
Collector Emitter Saturation Voltage1.95V
Collector Emitter Saturation Voltage Vce(on)1.95V
Power Dissipation Pd250W
Power Dissipation250W
Junction Temperature Tj Max150°C

Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationSolder
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product RangeACEPACK 2 M
SVHCNo SVHC (23-Jan-2024)

STMICROELECTRONICS, A2C35S12M3

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