MII75-12A3 модули igbt IXYS SEMICONDUCTOR

IGBT Module, Dual [Half Bridge], 90 A, 2.2 V, 370 W, 125 °C, Module

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Manufacturer
IXYS SEMICONDUCTOR
Manufacturer Part NoMII75-12A3
Order Code2782990

11 937 руб.

11 937 руб. всего

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11 937 ₽

11 699 ₽

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11 461 ₽

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11 220 ₽

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Transistor Polarity:N Channel; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:370W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

Техническая спецификация

Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current90A
DC Collector Current90A
Collector Emitter Saturation Voltage Vce(on)2.2V
Collector Emitter Saturation Voltage2.2V
Power Dissipation370W
Power Dissipation Pd370W
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max125°C

Junction Temperature Tj Max125°C
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins11Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (12-Jan-2017)

MII75-12A3 модули igbt IXYS SEMICONDUCTOR

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Техническая спецификация

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