ROHM, BSM120D12P2C005

Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V

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ManufacturerROHM
Manufacturer Part NoBSM120D12P2C005
Order Code2345472

49 613 руб.

49 613 руб. всего

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49 613 ₽

49 609 ₽

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Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:2.7V; Power Dis

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins10Pins

Rds(on) Test Voltage-
Gate Source Threshold Voltage Max2.7V
Power Dissipation780W
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)

ROHM, BSM120D12P2C005

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Количество:

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Техническая спецификация

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