WOLFSPEED, CCS050M12CM2

Silicon Carbide MOSFET, 6 Pack, Half Bridge, N Channel, 87 A, 1.2 kV, 0.025 ohm, Module

Изображение предназначено только для иллюстративных целей

ManufacturerWOLFSPEED
Manufacturer Part NoCCS050M12CM2
Order Code2317992

52 488 руб.

52 488 руб. всего

Минимальный заказ от 1 штуки

Оставить запрос

→ 1 шт. на сумму 52 488 руб.

Сроки доставки согласовываются в индивидуальном порядке

Количество:

Цена:

52 488 ₽

Обзор продукта

Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage V; Available until stocks are exhausted

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id87A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.025ohm
Transistor Case StyleModule
No. of Pins20Pins

Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.3V
Power Dissipation337W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Dec-2014)

WOLFSPEED, CCS050M12CM2

Оставить запрос

Количество:

Цена:

Обзор продукта

Техническая спецификация

Оставить запрос

Silicon Carbide MOSFET, 6 Pack, Half Bridge, N Channel, 87 A, 1.2 kV, 0.025 ohm, Module

Silicon Carbide MOSFET, Full Bridge, Quad N Channel, 50 A, 1.2 kV, 0.0225 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, 0.00144 ohm, Module

Silicon Carbide MOSFET, Single, N Channel, 120 A, 650 V, 0.0067 ohm, TO-247

Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V

Silicon Carbide MOSFET, FourPack, Four N Channel, 75 A, 1.2 kV, 0.013 ohm, ACEPACK 2

Silicon Carbide MOSFET, Half Bridge, N Channel, 100 A, 1.2 kV, 0.0081 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module

Silicon Carbide MOSFET, Half Bridge, N Channel, 50 A, 1.2 kV, 0.0225 ohm, Module

Silicon Carbide MOSFET, SixPack, Six N Channel, 400 A, 1.2 kV, 0.00275 ohm, Module

Silicon Carbide MOSFET, Single, N Channel, 120 A, 1.2 kV, 0.0223 ohm, TO-247

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module

Silicon Carbide MOSFET, EliteSiC, Half Bridge, Dual N Channel, 114 A, 1.2 kV, 0.0105 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 475 A, 1.2 kV, 0.00147 ohm, Module

Silicon Carbide MOSFET, FourPack, Four N Channel, 50 A, 1.2 kV, 0.025 ohm, ACEPACK 1

Silicon Carbide MOSFET, Single, N Channel, 118 A, 650 V, 0.017 ohm, TO-247N

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 381 A, 1.2 kV, 0.005 ohm

Silicon Carbide MOSFET, Three Level Inverter, Dual N Channel, 100 A, 1.2 kV, 8.1 mohm, Module

Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5.4 mohm, MO-299

Silicon Carbide MOSFET, Single, N Channel, 115 A, 1.2 kV, 0.0223 ohm, TO-247

Silicon Carbide MOSFET, Three Level Inverter, 100 A, 1.2 kV, 0.0113 ohm, Module