INFINEON, DF23MR12W1M1B11BPSA1

Silicon Carbide MOSFET, Half Bridge, N Channel, 25 A, 1.2 kV, 0.045 ohm, Module

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ManufacturerINFINEON
Manufacturer Part NoDF23MR12W1M1B11BPSA1
Order Code2990847

7 176 руб.

7 176 руб. всего

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→ 1 шт. на сумму 7 176 руб.

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7 176 ₽

7 175 ₽

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7 173 ₽

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Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.045ohm; Rds(on) Test Vol; Available until stocks are exhausted

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id25A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.045ohm
Transistor Case StyleModule
No. of Pins-

Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyPACK CoolSiC
SVHCNo SVHC (27-Jun-2018)

INFINEON, DF23MR12W1M1B11BPSA1

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Техническая спецификация

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