INFINEON, DF11MR12W1M1B11BPSA1

Silicon Carbide MOSFET, Half Bridge, N Channel, 50 A, 1.2 kV, 0.0225 ohm, Module

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ManufacturerINFINEON
Manufacturer Part NoDF11MR12W1M1B11BPSA1
Order Code2990846

8 450 руб.

8 450 руб. всего

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8 450 ₽

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Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.0225ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:4

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id50A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0225ohm
Transistor Case StyleModule
No. of Pins-

Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyPACK CoolSiC
SVHCNo SVHC (08-Jul-2021)

INFINEON, DF11MR12W1M1B11BPSA1

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Количество:

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Техническая спецификация

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