STARPOWER, MD300HFR120B3S

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 381 A, 1.2 kV, 0.005 ohm

Изображение предназначено только для иллюстративных целей

ManufacturerSTARPOWER
Manufacturer Part NoMD300HFR120B3S
Order Code2986058

90 515 руб.

90 515 руб. всего

Минимальный заказ от 1 штуки

Оставить запрос

→ 1 шт. на сумму 90 515 руб.

Сроки доставки согласовываются в индивидуальном порядке

Количество:

Цена:

90 515 ₽

Обзор продукта

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:381A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id381A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.005ohm
Transistor Case StyleModule
No. of Pins-

Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised

STARPOWER, MD300HFR120B3S

Оставить запрос

Количество:

Цена:

Обзор продукта

Техническая спецификация

Оставить запрос

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 381 A, 1.2 kV, 0.005 ohm

Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 50 A, 1.2 kV, 0.023 ohm, Module

Silicon Carbide MOSFET, Half Bridge, N Channel, 150 A, 1.2 kV, 0.0054 ohm, Module

Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 100 A, 1.2 kV, 0.011 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 290 A, 1.2 kV, 0.00196 ohm, Module

Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.015 ohm, TO-247

Silicon Carbide MOSFET, Half-Bridge Module, Dual N Channel, 149 A, 900 V, 0.01003 ohm, Module

Silicon Carbide MOSFET, SixPack, N Channel, 200 A, 1.2 kV, 0.0055 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 325 A, 2 kV, 0.004 ohm, Module

Silicon Carbide MOSFET, Single, N Channel, 202 A, 1.2 kV, 0.0113 ohm, TO-247

Silicon Carbide MOSFET, SixPack, N Channel, 488 A, 1.2 kV, 0.0026 ohm, ACEPACK DRIVE

Silicon Carbide MOSFET, EliteSiC, Half Bridge, Dual N Channel, 114 A, 1.2 kV, 0.0105 ohm, Module

Silicon Carbide MOSFET, Chopper, N Channel, 180 A, 1.2 kV, Module

Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5.9 mohm, TO-247

Silicon Carbide MOSFET, Chopper, N Channel, 400 A, 1.2 kV, Module

Silicon Carbide MOSFET, 6 Pack, Half Bridge, N Channel, 87 A, 1.2 kV, 0.025 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 51 A, 1.2 kV, 0.02 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.005 ohm, Module

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 600 A, 1.2 kV, Module

Silicon Carbide MOSFET, Half Bridge, N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module