STARPOWER, MD120HFR120C2S

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.01 ohm

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ManufacturerSTARPOWER
Manufacturer Part NoMD120HFR120C2S
Order Code2986055

61 231 руб.

61 231 руб. всего

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61 231 ₽

58 760 ₽

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Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.01ohm
Transistor Case StyleModule
No. of Pins-

Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised

STARPOWER, MD120HFR120C2S

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Количество:

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Обзор продукта

Техническая спецификация

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