MD200HFR120C2S mosfet-транзисторы и модули из карбида кремния (sic) STARPOWER

Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 299 A, 1.2 kV, 0.0087 ohm

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Manufacturer
STARPOWER
Manufacturer Part NoMD200HFR120C2S
Order Code2986056

130 499 руб.

130 499 руб. всего

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→ 1 шт. на сумму 130 499 руб.

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Цена:

130 499 ₽

Обзор продукта

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:299A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage V

Техническая спецификация

MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id299A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0087ohm
Transistor Case StyleModule
No. of Pins-

Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised

MD200HFR120C2S mosfet-транзисторы и модули из карбида кремния (sic) STARPOWER

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Количество:

Цена:

Обзор продукта

Техническая спецификация

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